Technologies


Epitaxial growth techniques

Pulsed laser deposition

The system used has been developed in collaboration with RIBER France.

Pulsed laser deposition has gain interest for the epitaxial growth of Superconductors like Y1Ba2Cu3O7 in the years 1990 due to its ability to keep stoichiometry. A UV laser beam (from excimer laser @248 nm) ablates a target of the desired material for an energy density over a threshold. The particles “ablated” from the target are condensed on the heated substrate placed in front of the target at about 5 to 10 centimeters. This technique has been used successfully for LiNbO3 and VO2.


Deposition of thin films are carried out in collaboration with Thales Research and Technology and SPCTS –Univ. Limoges.

Sputtering

Sputtering has been widely used for the deposition of thin films of metals and dielectrics. A plasma is generated by electrical discharge (DC or RF) between the cathode (target) and the anode (substrate) where sputtered atoms and molecules condense. Deposition of dielectrics require to operate with Radio Frequency (13,56 MHz).

Such simple systems are being used by TE-OX for the deposition of oxides (i.e. MgO) or metals (Au, Ag)


Nanowires and Nanorods

Hydrothermal synthesis

in collaboration with SP2M – Univ. Paris-Saclay

The autoclave system used for hydrothermal synthesis of nanorods and nanowires is from Autoclave Maxitech France. These autoclaves can be heated up to 250 oC and under 234 bars. The heating of the autoclave is achieved with a coiled heating oven around its outer walls. The oven is connected to a temperature regulator which allows setting up and controlling the external temperature of the system.